| \? BY251GP, BY252GP, BY253GP, BY254GP, BY255GP 7 Www'ViShay'C°m Vishay General Semiconductor 10 100 w m(U A a Le 3 1 8 E 2 BS 3 T:E E § 3 E O E 0 0.1 .6 N 6 E 5 E '3 E 0.01 10 Percent of Rated Peak Reverse Voltage (‘7/n) Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak FcnNard Surge Current Fig. 5 - Typical Junction Capacitance 100iES O 10 EMEoin3G’ 1 |L c(11EinE01 E 0.5 0.7 0.5 0.9 1.0 1.1 1.2 1.3 instantaneous Forward Voltage (V) Fig. 4 - Typical Instantaneous FonNard Characteristics PACKAGE ouTLINE DIMENSIONS in inches (millimeters) Do-2o1AD 1.0 (25.4) MW. 0 210 5.3 0.190 (4.6) 4’l 1% LDIA.0.285 (7.2)1.0 (25.4) 0.375 9.5) MW.0.0481122) 0052 (1.32) DIA. \\\\-n l<— Revision: 11-Dec-13 3 Document Number: 88541 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/ooc?91000 |